FCPF190N60E_F152

Specifications

Ihs Manufacturer

ON SEMICONDUCTOR

Drain Currentmax Id

20.6 A

Number Of Terminals

3

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperaturemin

-55 °C

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

400 mJ

Ds Breakdown Voltagemin

600 V

Rohs Code

Yes

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Package Style

FLANGE MOUNT

REACH Uyumluluk Kodu

not_compliant

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

Pulsed Drain Currentmax Idm

61.8 A

Jesd30 Code

R-PSFM-T3

Package Shape

RECTANGULAR

Yüzey Montaj

NO

Number Of Elements

1

Transistor Application

SWITCHING

Case Connection

ISOLATED

Üretici Parça No

FCPF190N60E-F152

Jedec95 Code

TO-220AB

Package Description

FLANGE MOUNT, R-PSFM-T3

Risk Rank

5.18

Part Life Cycle Code

Active

ECCN Kodu

EAR99

Turnoff Timemax Toff

252 ns

Terminal Kaplaması

Tin (Sn)

Feedback Capmax Crss

165 pF

Operating Temperaturemax

150 °C

Drainsource On Resistancemax

0.19 Ω

Terminal Formu

THROUGH-HOLE

Transistor Element Material

SILICON

Turnon Timemax Ton

94 ns

Power Dissipationmax Abs

39 W

Drain Currentmax Abs Id

20.6 A