FCPF190N60

Specifications

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Number Of Elements

1

Weight

2.27g

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2013

Transistor Application

SWITCHING

Case Connection

ISOLATED

Jedec95 Code

TO-220AB

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

74nC @ 10V

Current Continuous Drain Id25

20.2A Tc

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3 Full Pack

Drain To Source Breakdown Voltage

650V

Fet Type

N-Channel

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Avalanche Energy Rating Eas

400 mJ

Uzunluk

10.36mm

Rds On Max Id Vgs

199m Ω @ 10A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.5V @ 250μA

Kurşunsuz

Lead Free

Power Dissipation Max

39W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

60.6A

Genişlik

4.9mm

Input Capacitance Ciss Max Vds

2950pF @ 25V

Terminal Sayısı

3

Continuous Drain Current Id

20.2A

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

600V

Seri

SuperFET® II

Turn Off Delay Time

64 ns

ECCN Kodu

EAR99