FCP9N60N

Specifications

Drain To Source Breakdown Voltage

600V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Through Hole

Uzunluk

10.67mm

Rds On Max Id Vgs

385m Ω @ 4.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Pulsed Drain Currentmax Idm

27A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

83.3W Tc

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Number Of Elements

1

Weight

1.8g

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-220AB

Ambalaj

Tube

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

29nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

9A Tc

Drain Currentmax Abs Id

9A

Element Configuration

Single

Turn On Delay Time

12.7 ns

Yükseklik

9.4mm

Parça Durumu

Active

Rise Time

8.7ns

Vgs Max

±30V

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

30V

Threshold Voltage

2V

Fall Time Typ

10.2 ns

Genişlik

4.83mm

Input Capacitance Ciss Max Vds

1240pF @ 100V