Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 16.3mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 20V
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 650V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 25 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Uzunluk
- 10.67mm
- Fabrika Tedarik Süresi
- 12 Weeks
- Element Configuration
- Single
- Yayın Yılı
- 2014
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Fall Time Typ
- 4.2 ns
- Genişlik
- 4.7mm
- Seri
- FRFET®, SuperFET® II
- Rds On Max Id Vgs
- 190m Ω @ 10A, 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Avalanche Energy Rating Eas
- 400 mJ
- Continuous Drain Current Id
- 20.6A
- Gate Charge Qg Max Vgs
- 78nC @ 10V
- Input Capacitance Ciss Max Vds
- 3225pF @ 25V
- Power Dissipation Max
- 208W Tc
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 2mA
- Pin Sayısı
- 3
- Rise Time
- 11ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 1.8g
- Transistor Application
- SWITCHING
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