Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 650V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 20 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Uzunluk
- 10.67mm
- Fabrika Tedarik Süresi
- 12 Weeks
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Parça Durumu
- Active
- Fall Time Typ
- 5 ns
- Genişlik
- 4.83mm
- Seri
- SuperFET® II
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Yükseklik
- 16.51mm
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 20V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Vgsth Max Id
- 3.5V @ 250μA
- Pin Sayısı
- 3
- Rise Time
- 10ns
- Weight
- 1.8g
- Power Dissipation
- 208W
- Transistor Application
- SWITCHING
- Threshold Voltage
- 2.5V
- Vgs Max
- ±20V
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Kodu
- e3
- Current Continuous Drain Id25
- 20.2A Tc
- Ambalaj
- Tube
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