FCP130N60

Specifications

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

70nC @ 10V

Power Dissipation Max

278W Tc

Input Capacitance Ciss Max Vds

3590pF @ 380V

Kılıf / Paket

TO-220-3

Rds On Max Id Vgs

130m Ω @ 14A, 10V

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

84A

Continuous Drain Current Id

28A

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

720 mJ

Kurşunsuz Kodu

yes

Vgs Max

±20V

Parça Durumu

Active

Fall Time Typ

4 ns

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Number Of Elements

1

Number Of Channels

1

Turn Off Delay Time

65 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

28A Tc

Seri

SuperFET® II

Ambalaj

Tube

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

25 ns

Montaj

Through Hole

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

600V

Direnç

130mOhm

Terminal Sayısı

3

Vgsth Max Id

3.5V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED