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Specifications
- Rds On Max Id Vgs
- 299m Ω @ 5.4A, 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 10.8A
- Gate Charge Qg Max Vgs
- 35.6nC @ 10V
- Input Capacitance Ciss Max Vds
- 1505pF @ 100V
- Power Dissipation Max
- 94W Tc
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Direnç
- 380MOhm
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Rise Time
- 9.1ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 1.8g
- Power Dissipation
- 94W
- Transistor Application
- SWITCHING
- Threshold Voltage
- 2V
- Vgs Max
- ±30V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Current Continuous Drain Id25
- 10.8A Tc
- Ambalaj
- Tube
- Turn Off Delay Time
- 42 ns
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 15.9mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 600V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 13.6 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
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