FCP104N60

Specifications

Transistor Element Material

SILICON

Yükseklik

16.3mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Turn On Delay Time

26 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Uzunluk

10.67mm

Fabrika Tedarik Süresi

12 Weeks

Parça Durumu

Active

Fall Time Typ

3.3 ns

Element Configuration

Single

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Genişlik

4.7mm

Seri

SuperFET® II

Drain To Source Voltage Vdss

600V

Rds On Max Id Vgs

104m Ω @ 18.5A, 10V

Continuous Drain Current Id

37A

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

809 mJ

Gate Charge Qg Max Vgs

82nC @ 10V

Power Dissipation Max

357W Tc

Input Capacitance Ciss Max Vds

4165pF @ 380V

Pin Sayısı

3

ECCN Kodu

EAR99

Terminal Sayısı

3

Vgsth Max Id

3.5V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Transistor Application

SWITCHING

Rise Time

18ns

Vgs Max

±20V