FCP099N60E

Specifications

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

3465pF @ 380V

Power Dissipation Max

357W Tc

Gate Charge Qg Max Vgs

114nC @ 10V

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

809 mJ

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

37A

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

111A

Rds On Max Id Vgs

99m Ω @ 18.5A, 10V

Drain To Source Voltage Vdss

600V

Drainsource On Resistancemax

0.099Ohm

Ambalaj

Tube

Seri

SuperFET® II

Current Continuous Drain Id25

37A Tc

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

92 ns

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Element Configuration

Single

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Parça Durumu

Active

Fall Time Typ

22 ns

Vgs Max

±20V

Ds Breakdown Voltagemin

600V

Rise Time

23ns

Fabrika Tedarik Süresi

12 Weeks

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

HTS Kodu

8541.29.00.95

Vgsth Max Id

3.5V @ 250μA