FCH47N60-F085

Specifications

Transistor Element Material

SILICON

Yüzey Montaj

NO

Parça Durumu

Not For New Designs

Vgs Max

±30V

Avalanche Energy Rating Eas

810 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Through Hole

Temel Parça No

FCH47N60

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.079Ohm

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Rds On Max Id Vgs

79m Ω @ 47A, 10V

Current Continuous Drain Id25

47A Tc

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

47A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-247-3

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

250nC @ 10V

Input Capacitance Ciss Max Vds

8000pF @ 25V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSFM-T3

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Number Of Elements

1

Power Dissipation Max

417W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101, SuperFET™

Vgsth Max Id

5V @ 250μA

Drain To Source Voltage Vdss

600V