Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drainsource On Resistancemax
- 0.098Ohm
- Genişlik
- 4.82mm
- ECCN Kodu
- EAR99
- Power Dissipation
- 312.5W
- Fall Time Typ
- 73 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Uzunluk
- 15.87mm
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Yükseklik
- 20.82mm
- Element Configuration
- Single
- Turn On Delay Time
- 34 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Montaj Tipi
- Through Hole
- Gate Charge Qg Max Vgs
- 181nC @ 10V
- Turn Off Delay Time
- 105 ns
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 30V
- Drain To Source Breakdown Voltage
- 600V
- Input Capacitance Ciss Max Vds
- 6640pF @ 25V
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-247-3
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- Weight
- 6.39g
- Seri
- SuperMOS™
- Threshold Voltage
- 3V
- Vgsth Max Id
- 5V @ 250μA
- Reach Svhc
- No SVHC
- Power Dissipation Max
- 312.5W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Continuous Drain Current Id
- 35A
- Pin Sayısı
- 3
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