Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 52A
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Montaj
- Through Hole
- Rise Time
- 38ns
- Weight
- 6.39g
- Yayın Yılı
- 2013
- JESD-609 Kodu
- e3
- Power Dissipation Max
- 481W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- Tin (Sn)
- Input Capacitance Ciss Max Vds
- 8660pF @ 100V
- Gate To Source Voltage Vgs
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yükseklik
- 20.82mm
- Turn On Delay Time
- 43 ns
- Element Configuration
- Single
- Avalanche Energy Rating Eas
- 1128 mJ
- Drive Voltage Max Rds On Min Rds On
- 10V
- Uzunluk
- 15.87mm
- Power Dissipation
- 481W
- Radyasyon Dayanımı
- No
- Pulsed Drain Currentmax Idm
- 156A
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 52A Tc
- Rds On Max Id Vgs
- 72m Ω @ 26A, 10V
- Seri
- FRFET®, SuperFET® II
- Vgsth Max Id
- 5V @ 250μA
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn Off Delay Time
- 140 ns
- Gate Charge Qg Max Vgs
- 215nC @ 10V
- Drain To Source Breakdown Voltage
- 600V
- Kılıf / Paket
- TO-247-3
- Fet Type
- N-Channel
- Montaj Tipi
- Through Hole
- Vgs Max
- ±20V
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