FCD900N60Z

Specifications

Avalanche Energy Rating Eas

47.5 mJ

Parça Durumu

Active

Drain To Source Breakdown Voltage

650V

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

720pF @ 25V

Jesd30 Code

R-PSSO-G2

Current Continuous Drain Id25

4.5A Tc

Rds On Max Id Vgs

900m Ω @ 2.3A, 10V

Seri

SuperFET® II

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

33.6 ns

Drainsource On Resistancemax

0.9Ohm

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

17nC @ 10V

Terminal Kaplaması

Tin (Sn)

Rise Time

5.2ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

4.5A

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Turn On Delay Time

10.9 ns

REACH Uyumluluk Kodu

not_compliant

Uzunluk

6.73mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Montaj Tipi

Surface Mount

Power Dissipation Max

52W Tc

Temel Parça No

FCD900N60

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

11.9 ns

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

6.22mm

Jedec95 Code

TO-252AA