FCD360N65S3R0

Specifications

Gate Charge Qg Max Vgs

18nC @ 10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Fabrika Tedarik Süresi

14 Weeks

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Jedec95 Code

TO-252AA

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.36Ohm

Drain Currentmax Abs Id

10A

Drain To Source Voltage Vdss

650V

Ds Breakdown Voltagemin

650V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Terminal Sayısı

2

Vgsth Max Id

4.5V @ 1mA

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

25A

Case Connection

DRAIN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

RoHS Compliant

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Avalanche Energy Rating Eas

40 mJ

Power Dissipation Max

83W Tc

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±30V

Seri

SuperFET® III

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

730pF @ 400V

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

360m Ω @ 5A, 10V

Current Continuous Drain Id25

10A Tc