FCB20N60TM

Specifications

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

20A Tc

Yüzey Montaj

YES

Drainsource On Resistancemax

0.19Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Power Dissipation Max

208W Tc

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Number Of Elements

1

Avalanche Energy Rating Eas

690 mJ

Yayın Yılı

2005

Terminal Sayısı

2

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

60A

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

98nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

12 Weeks

Ambalaj

Tape & Reel (TR)

Temel Parça No

FCB20N60

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Rds On Max Id Vgs

190m Ω @ 10A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

3080pF @ 25V

Seri

SuperFET™

Case Connection

DRAIN

Vgs Max

±30V

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Drain Currentmax Abs Id

20A