Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Genişlik
- 9.65mm
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2008
- Avalanche Energy Rating Eas
- 690 mJ
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 60A
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 208W Tc
- Jesd30 Code
- R-PSSO-G2
- Direnç
- 190mOhm
- Current Continuous Drain Id25
- 20A Tc
- Yükseklik
- 4.83mm
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 30V
- Fall Time Typ
- 65 ns
- Continuous Drain Current Id
- 20A
- ECCN Kodu
- EAR99
- Case Connection
- DRAIN
- Akım Değeri
- 20A
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 1.31247g
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 230 ns
- Input Capacitance Ciss Max Vds
- 3080pF @ 25V
- Gate Charge Qg Max Vgs
- 98nC @ 10V
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 4 Weeks
- Turn On Delay Time
- 62 ns
- Temel Parça No
- FCB20N60
- Element Configuration
- Single
- Number Of Elements
- 1
- Terminal Sayısı
- 2
- Contact Plating
- Tin
- Voltage Rated Dc
- 600V
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