FCB110N65F

Specifications

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

105A

Avalanche Energy Rating Eas

809 mJ

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

35A Tc

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

357W Tc

Ds Breakdown Voltagemin

650V

Continuous Drain Current Id

35A

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

20V

HTS Kodu

8541.29.00.95

Fall Time Typ

5.7 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

1.31247g

Parça Durumu

Active

Input Capacitance Ciss Max Vds

4895pF @ 100V

Turn Off Delay Time

89 ns

JESD-609 Kodu

e3

Case Connection

DRAIN

Fet Type

N-Channel

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

145nC @ 10V

Turn On Delay Time

31 ns

Fabrika Tedarik Süresi

13 Weeks

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Drainsource On Resistancemax

0.11Ohm

Rise Time

21ns

Vgsth Max Id

5V @ 3.5mA

Drive Voltage Max Rds On Min Rds On

10V