Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Rise Time
- 210ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Uzunluk
- 16.2mm
- Vgsth Max Id
- 5V @ 250μA
- Element Configuration
- Single
- Number Of Elements
- 1
- Terminal Sayısı
- 3
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 270nC @ 10V
- Montaj Tipi
- Through Hole
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 12 Weeks
- Turn On Delay Time
- 185 ns
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 73m Ω @ 23.5A, 10V
- Vgs Max
- ±30V
- Seri
- SuperFET™
- Power Dissipation
- 417W
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Kılıf / Paket
- TO-3P-3, SC-65-3
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 47A Tc
- Yükseklik
- 20.1mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 417W Tc
- Threshold Voltage
- 3V
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Genişlik
- 5mm
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 6.401g
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