Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 600V
- Uzunluk
- 16.2mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 5V @ 250μA
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Drainsource On Resistancemax
- 0.07Ohm
- Rise Time
- 210ns
- Gate Charge Qg Max Vgs
- 270nC @ 10V
- Montaj Tipi
- Through Hole
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 12 Weeks
- Turn On Delay Time
- 185 ns
- Element Configuration
- Single
- Number Of Elements
- 1
- Terminal Sayısı
- 3
- Seri
- SuperFET™
- Vgs Max
- ±30V
- Power Dissipation
- 417W
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 70m Ω @ 23.5A, 10V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kurşunsuz Kodu
- yes
- Power Dissipation Max
- 417W Tc
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 20.1mm
- Current Continuous Drain Id25
- 47A Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Tin (Sn)
- Genişlik
- 5mm
- Ambalaj
- Tube
- Threshold Voltage
- 5V
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Transistor Application
- SWITCHING
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