
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 312W
- Vgs Max
- ±30V
- Seri
- FRFET®, SuperFET® II
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 95m Ω @ 18A, 10V
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Montaj
- Through Hole
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Uzunluk
- 16.2mm
- Vgsth Max Id
- 5V @ 250μA
- Rise Time
- 17ns
- Drainsource On Resistancemax
- 0.095Ohm
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Fabrika Tedarik Süresi
- 39 Weeks
- Turn On Delay Time
- 27 ns
- Gate Charge Qg Max Vgs
- 112nC @ 10V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Element Configuration
- Single
- Number Of Elements
- 1
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 92 ns
- Input Capacitance Ciss Max Vds
- 4245pF @ 100V
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 6.401g
- Nominal Vgs
- 3.7 V
- Fall Time Typ
- 4 ns
- Gate To Source Voltage Vgs
- 30V
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 34.9A
- Power Dissipation Max
- 312W Tc
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Current Continuous Drain Id25
- 34.9A Tc
- Yükseklik
- 20.1mm
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors

