Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Through Hole
- Gate Charge Qg Max Vgs
- 98nC @ 10V
- Temel Parça No
- FCA20N60
- Ambalaj
- Tube
- Turn On Delay Time
- 62 ns
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 60A
- Operating Mode
- ENHANCEMENT MODE
- Avalanche Energy Rating Eas
- 690 mJ
- Terminal Sayısı
- 3
- Power Dissipation Max
- 208W Tc
- Direnç
- 190MOhm
- Vgsth Max Id
- 5V @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 10V
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 20A Tc
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 140ns
- Terminal Kaplaması
- MATTE TIN
- Gate To Source Voltage Vgs
- 30V
- Kurşunsuz
- Lead Free
- Montaj
- Through Hole
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Pin Sayısı
- 3
- Fall Time Typ
- 65 ns
- Kurşunsuz Kodu
- yes
- Continuous Drain Current Id
- 20A
- Power Dissipation
- 208W
- Vgs Max
- ±30V
- Seri
- SuperFET™
- Fet Type
- N-Channel
- Drain To Source Breakdown Voltage
- 600V
- Rds On Max Id Vgs
- 190m Ω @ 10A, 10V
- Weight
- 6.401g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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