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Specifications
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation Max
- 1.4W (Ta)
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 21 nC @ 4 V
- Çalışma Sıcaklığı
- 150°C (TJ)
- Paket
- Bulk
- Fet Type
- N-Channel
- Kılıf / Paket
- 8-SMD, Flat Lead
- Tedarikçi Cihaz Paketi
- 8-ECH
- Input Capacitance Ciss Max Vds
- 1740 pF @ 10 V
- Rds On Max Id Vgs
- 16mOhm @ 4A, 4V
- Current Continuous Drain Id25
- 9A (Ta)
- Ürün Durumu
- Obsolete
- Drain To Source Voltage Vdss
- 20 V
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