CPH6354-TL-W

Specifications

Number Of Elements

1

Jesd30 Code

R-PDSO-G6

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

78 ns

Yayın Yılı

2012

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

150°C TJ

Turn On Delay Time

5.8 ns

Vgs Max

±20V

Current Continuous Drain Id25

4A Ta

Contact Plating

Tin

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Transistor Application

SWITCHING

Montaj

Surface Mount

Ds Breakdown Voltagemin

60V

Fet Type

P-Channel

Power Dissipation Max

1.6W Ta

JESD-609 Kodu

e6

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

4A

Drain To Source Voltage Vdss

60V

Vgsth Max Id

2.6V @ 1mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

16A

Terminal Sayısı

6

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Rds On Max Id Vgs

100m Ω @ 2A, 10V

Montaj Tipi

Surface Mount

Fall Time Typ

40 ns

Fabrika Tedarik Süresi

13 Weeks

Rise Time

12ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.1Ohm

Input Capacitance Ciss Max Vds

600pF @ 20V

Gate Charge Qg Max Vgs

14nC @ 10V

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON