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Specifications
- Gate Charge Qg Max Vgs
- 4.7nC @ 4.5V
- Input Capacitance Ciss Max Vds
- 430pF @ 10V
- Yükseklik
- 900μm
- Drainsource On Resistancemax
- 0.05Ohm
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 41ns
- Operating Mode
- ENHANCEMENT MODE
- Montaj Tipi
- Surface Mount
- Fall Time Typ
- 37 ns
- Rds On Max Id Vgs
- 50m Ω @ 2A, 4.5V
- Drive Voltage Max Rds On Min Rds On
- 1.8V 4.5V
- Continuous Drain Current Id
- 4A
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Genişlik
- 1.6mm
- Parça Durumu
- Obsolete
- Terminal Pozisyonu
- DUAL
- Kurşunsuz Kodu
- yes
- Power Dissipation Max
- 1W Ta
- JESD-609 Kodu
- e6
- Fet Type
- N-Channel
- Halogen Free
- Halogen Free
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Voltage Vdss
- 30V
- Drain Currentmax Abs Id
- 4A
- Power Dissipation
- 1W
- Vgs Max
- ±12V
- Çalışma Sıcaklığı
- 150°C TJ
- Turn On Delay Time
- 10 ns
- Yüzey Montaj
- YES
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Uzunluk
- 2.9mm
- Current Continuous Drain Id25
- 4A Ta
- Kılıf / Paket
- SC-96
- Contact Plating
- Tin
- Pin Sayısı
- 3
- Number Of Elements
- 1
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