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Specifications
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 23 Weeks
- Vgsth Max Id
- 2V @ 250μA
- Uzunluk
- 3.0226mm
- Element Configuration
- Single
- Contact Plating
- Tin
- Yayın Yılı
- 2004
- Ambalaj
- Cut Tape (CT)
- Yüzey Montaj
- YES
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 10
- Fet Type
- P-Channel
- Nominal Vgs
- 2 V
- Transistor Element Material
- SILICON
- Voltage Rated Dc
- -50V
- Drive Voltage Max Rds On Min Rds On
- 5V
- Akım Değeri
- -130mA
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Continuous Drain Id25
- 130mA Ta
- Continuous Drain Current Id
- 130mA
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Genişlik
- 1.397mm
- Terminal Pozisyonu
- DUAL
- Input Capacitance Ciss Max Vds
- 30pF @ 5V
- Yükseklik
- 1.016mm
- ECCN Kodu
- EAR99
- Threshold Voltage
- -2V
- Terminal Sayısı
- 3
- Rise Time
- 1ns
- Power Dissipation Max
- 225mW Ta
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Pin Sayısı
- 3
- Halogen Free
- Halogen Free
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Vgs Max
- ±20V
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