Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 40
- Voltage Rated Dc
- 350V
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 70MHz
- Collector Base Voltage Vcbo
- 400V
- Ambalaj
- Cut Tape (CT)
- Pin Sayısı
- 4
- Emitter Base Voltage Vebo
- 5V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- 500mV
- Collector Emitter Voltage Vceo
- 350V
- Transition Frequency
- 70MHz
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2007
- Genişlik
- 3.7mm
- Contact Plating
- Tin
- Number Of Elements
- 1
- Max Collector Current
- 100mA
- Kılıf / Paket
- TO-261-4, TO-261AA
- Max Breakdown Voltage
- 350V
- RoHS Durumu
- RoHS Compliant
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 4
- Frekans
- 70MHz
- Case Connection
- COLLECTOR
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Uzunluk
- 6.7mm
- Current Collector Cutoff Max
- 20nA ICBO
- Temel Parça No
- BSP19
- Hfemin
- 40
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 350V
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Power Dissipation
- 800mW
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