BS170-D75Z

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

60V

Current Continuous Drain Id25

500mA Ta

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

11 Weeks

Input Capacitance Ciss Max Vds

40pF @ 10V

Drain Currentmax Abs Id

0.5A

Terminal Pozisyonu

BOTTOM

Transistor Element Material

SILICON

Temel Parça No

BS170

Jesd30 Code

O-PBCY-T3

Ambalaj

Tape & Box (TB)

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

NO

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Number Of Elements

1

Drainsource On Resistancemax

5Ohm

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

60V

Feedback Capmax Crss

10 pF

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Power Dissipation Max

830mW Ta

Montaj Tipi

Through Hole

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Terminal Sayısı

3

Rds On Max Id Vgs

5 Ω @ 200mA, 10V

Vgsth Max Id

3V @ 1mA

Qualification Status

Not Qualified