Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 100V
- Voltage Rated Dc
- 100V
- Transistor Type
- NPN - Darlington
- Hfemin
- 750
- Dc Current Gain Hfe Min Ic Vce
- 750 @ 3A 3V
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 65W
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Case Connection
- COLLECTOR
- Transistor Application
- AMPLIFIER
- Yayın Yılı
- 1999
- Vce Saturation Max Ib Ic
- 2V @ 12mA, 3A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- Tin (Sn)
- Weight
- 4.535924g
- Collectoremitter Breakdown Voltage
- 100V
- Power Dissipation
- 40W
- Genişlik
- 4.82mm
- Polarity
- NPN
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3
- Max Collector Current
- 8A
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Montaj Tipi
- Through Hole
- Yüzey Montaj
- NO
- Akım Değeri
- 8A
- Collector Base Voltage Vcbo
- 100V
- Current Collector Cutoff Max
- 500μA
- Additional Feature
- LEADFORM OPTIONS ARE AVAILABLE
- Continuous Collector Current
- 4A
- Pin Sayısı
- 3
- Yükseklik
- 9.28mm
- Emitter Base Voltage Vebo
- 5V
- Number Of Elements
- 1
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