Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 10A
- Voltage Rated Dc
- 100V
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 2V
- Qualification Status
- Not Qualified
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 5A 4V
- Akım Değeri
- 10A
- JESD-609 Kodu
- e0
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Transistor Type
- NPN - Darlington
- Montaj Tipi
- Through Hole
- Hfemin
- 1000
- Yüzey Montaj
- NO
- REACH Uyumluluk Kodu
- not_compliant
- ECCN Kodu
- EAR99
- Kurşunsuz
- Contains Lead
- Collector Base Voltage Vcbo
- 100V
- Continuous Collector Current
- 10A
- Pin Sayısı
- 3
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Case Connection
- COLLECTOR
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 1mA
- Kurşunsuz Kodu
- no
- Max Power Dissipation
- 125W
- Tepe Reflow Sıcaklığı (°C)
- 240
- Ambalaj
- Tube
- Vce Saturation Max Ib Ic
- 2V @ 20mA, 5A
- Transistor Application
- AMPLIFIER
- Emitter Base Voltage Vebo
- 5V
- Number Of Elements
- 1
- Yayın Yılı
- 2002
- RoHS Durumu
- Non-RoHS Compliant
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 30
- Collectoremitter Breakdown Voltage
- 100V
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Kılıf / Paket
- TO-218-3
- Power Dissipation
- 125W
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