Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 1mA
- Max Power Dissipation
- 125W
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Case Connection
- COLLECTOR
- Collector Base Voltage Vcbo
- 100V
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Transistor Type
- PNP - Darlington
- Montaj Tipi
- Through Hole
- Hfemin
- 1000
- Yüzey Montaj
- NO
- Akım Değeri
- -10A
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 5A 4V
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 100V
- Max Collector Current
- 10A
- Voltage Rated Dc
- -100V
- Power Dissipation
- 125W
- Fabrika Tedarik Süresi
- 2 Weeks
- Polarity
- PNP
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-247-3
- Terminal Kaplaması
- Tin (Sn)
- Collectoremitter Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 40
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Transistor Application
- AMPLIFIER
- Emitter Base Voltage Vebo
- 5V
- Number Of Elements
- 1
- Yayın Yılı
- 2002
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