Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 500mA 1V
- Vce Saturation Max Ib Ic
- 800mV @ 200mA, 2A
- Fabrika Tedarik Süresi
- 2 Weeks
- Emitter Base Voltage Vebo
- -5V
- Kurşunsuz Kodu
- yes
- Polaritychannel Type
- PNP
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 3MHz
- Hfemin
- 15
- Akım Değeri
- -4A
- Collector Base Voltage Vcbo
- -80V
- Collectoremitter Saturation Voltage
- -800mV
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 80V
- Transition Frequency
- 3MHz
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Max Power Dissipation
- 36W
- Montaj
- Through Hole
- Ambalaj
- Tube
- Weight
- 761mg
- Current Collector Cutoff Max
- 100μA
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- -80V
- Power Dissipation
- 36W
- Collectoremitter Breakdown Voltage
- 80V
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Application
- SWITCHING
- Max Collector Current
- 4A
- Frekans
- 3MHz
- JESD-609 Kodu
- e3
- Transistor Type
- PNP
- Transistor Element Material
- SILICON
- Temel Parça No
- BD442
- Parça Durumu
- Obsolete
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