Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 800mV @ 200mA, 2A
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 10mA 5V
- Emitter Base Voltage Vebo
- 5V
- Fabrika Tedarik Süresi
- 11 Weeks
- ECCN Kodu
- EAR99
- Polaritychannel Type
- NPN
- Kurşunsuz Kodu
- yes
- Gain Bandwidth Product
- 3MHz
- Akım Değeri
- 4A
- Hfemin
- 25
- Collectoremitter Saturation Voltage
- 800mV
- Collector Base Voltage Vcbo
- 60V
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 60V
- Transition Frequency
- 3MHz
- Pin Sayısı
- 3
- Kurşunsuz
- Lead Free
- Weight
- 761mg
- Ambalaj
- Bulk
- Montaj
- Through Hole
- Max Power Dissipation
- 36W
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Current Collector Cutoff Max
- 100μA ICBO
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 60V
- Power Dissipation
- 36W
- Voltage Rated Dc
- 60V
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj Tipi
- Through Hole
- Number Of Elements
- 1
- Frekans
- 3MHz
- Max Collector Current
- 4A
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Temel Parça No
- BD439
- JESD-609 Kodu
- e3
- Transistor Type
- NPN
- Kılıf / Paket
- TO-225AA, TO-126-3
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