Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 6MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Bulk
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- 5V
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Hfemin
- 30
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 50mA 10V
- Max Collector Current
- 500mA
- Max Breakdown Voltage
- 350V
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-225AA, TO-126-3
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Montaj Tipi
- Through Hole
- Pin Sayısı
- 3
- Temel Parça No
- BD159
- Element Configuration
- Single
- Collectoremitter Breakdown Voltage
- 100V
- Kurşunsuz
- Lead Free
- Yayın Yılı
- 2003
- Fabrika Tedarik Süresi
- 2 Weeks
- Polaritychannel Type
- NPN
- Reach Svhc
- No SVHC
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- AMPLIFIER
- Additional Feature
- HIGH RELIABILITY
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 350V
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Power Dissipation
- 20W
- Transistor Type
- NPN
- Terminal Sayısı
- 3
- Yüzey Montaj
- NO
- Collector Base Voltage Vcbo
- 375V
- Collector Emitter Voltage Vceo
- 350V
- Power Dissipation
- 20W
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