Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 1.25W
- Transistor Type
- NPN
- Voltage Rated Dc
- 80V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Contact Plating
- Tin
- Transistor Application
- AMPLIFIER
- JESD-609 Kodu
- e3
- Yayın Yılı
- 1999
- Yükseklik
- 11.04mm
- Polaritychannel Type
- NPN
- Fabrika Tedarik Süresi
- 9 Weeks
- Tepe Reflow Süresi (maks. sn)
- 40
- Reach Svhc
- No SVHC
- Radyasyon Dayanımı
- No
- Akım Değeri
- 1.5A
- RoHS Durumu
- ROHS3 Compliant
- Current Collector Cutoff Max
- 100nA ICBO
- Collector Base Voltage Vcbo
- 80V
- Collector Emitter Voltage Vceo
- 80V
- Power Dissipation
- 1.25W
- Terminal Sayısı
- 3
- Yüzey Montaj
- NO
- Uzunluk
- 7.74mm
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- 5V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Ambalaj
- Bulk
- Element Configuration
- Single
- Weight
- 4.535924g
- Collectoremitter Breakdown Voltage
- 80V
- Kurşunsuz
- Lead Free
- Collectoremitter Saturation Voltage
- 500mV
- Genişlik
- 2.66mm
- Pin Sayısı
- 3
- Temel Parça No
- BD139
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Pin Sayısı
- 3
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