Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 80V
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Contact Plating
- Tin
- Max Power Dissipation
- 12.5W
- Transistor Type
- NPN
- Yükseklik
- 11.2mm
- Yayın Yılı
- 2013
- Fabrika Tedarik Süresi
- 6 Weeks
- Polaritychannel Type
- NPN
- Reach Svhc
- No SVHC
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- RoHS Durumu
- RoHS Compliant
- Current Collector Cutoff Max
- 100nA ICBO
- Akım Değeri
- 1.5A
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- 80V
- Collector Emitter Voltage Vceo
- 80V
- Power Dissipation
- 1.25W
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- 5V
- Uzunluk
- 8.3mm
- ECCN Kodu
- EAR99
- Transition Frequency
- 250MHz
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- Genişlik
- 3.45mm
- Temel Parça No
- BD139
- Element Configuration
- Single
- Collectoremitter Breakdown Voltage
- 80V
- Weight
- 761mg
- Kurşunsuz
- Lead Free
- Collectoremitter Saturation Voltage
- 500mV
- Parça Durumu
- Obsolete
- Hfemin
- 40
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA 2V
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