Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Rated Dc
- 80V
- Contact Plating
- Tin
- Montaj
- Through Hole
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- Max Power Dissipation
- 1.25W
- Yayın Yılı
- 2011
- Yükseklik
- 11mm
- Reach Svhc
- No SVHC
- Polaritychannel Type
- NPN
- Fabrika Tedarik Süresi
- 22 Weeks
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- RoHS Durumu
- ROHS3 Compliant
- Current Collector Cutoff Max
- 100nA ICBO
- Radyasyon Dayanımı
- No
- Akım Değeri
- 1.5A
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 80V
- Collector Base Voltage Vcbo
- 80V
- Power Dissipation
- 1.25W
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- 5V
- ECCN Kodu
- EAR99
- Uzunluk
- 8mm
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Genişlik
- 3.25mm
- Temel Parça No
- BD139
- Weight
- 761mg
- Collectoremitter Breakdown Voltage
- 80V
- Element Configuration
- Single
- Collectoremitter Saturation Voltage
- 500mV
- Kurşunsuz
- Lead Free
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 2V
- Hfemin
- 40
- Parça Durumu
- Active
- Max Collector Current
- 1.5A
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
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