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RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- PNP
- Max Power Dissipation
- 300mW
- Voltage Rated Dc
- -45V
- Montaj Tipi
- Surface Mount
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Genişlik
- 1.3mm
- Transistor Element Material
- SILICON
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 45V
- Ambalaj
- Cut Tape (CT)
- Fabrika Tedarik Süresi
- 4 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation Max Ib Ic
- 620mV @ 50mA, 500mA
- Collectoremitter Saturation Voltage
- 620mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- BCX17
- Uzunluk
- 2.9mm
- Element Configuration
- Single
- Max Collector Current
- 500mA
- Terminal Formu
- GULL WING
- Max Breakdown Voltage
- 45V
- Tepe Reflow Süresi (maks. sn)
- 40
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 3
- Akım Değeri
- -500mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA 1V
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Kurşunsuz Kodu
- yes
- Hfemin
- 100
- Collector Emitter Voltage Vceo
- 45V
- Collector Base Voltage Vcbo
- 50V
- Power Dissipation
- 300mW
- Emitter Base Voltage Vebo
- 5V
- Reach Svhc
- No SVHC
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