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Compliant
Support
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Specifications
- Transistor Type
- NPN
- Max Power Dissipation
- 225mW
- Montaj Tipi
- Surface Mount
- Voltage Rated Dc
- 32V
- Number Of Elements
- 1
- Gain Bandwidth Product
- 100MHz
- Terminal Kaplaması
- Tin (Sn)
- Radyasyon Dayanımı
- No
- Genişlik
- 1.4mm
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 32V
- Ambalaj
- Tape & Reel (TR)
- Fabrika Tedarik Süresi
- 2 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency
- 100MHz
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Collectoremitter Saturation Voltage
- 700mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- BCW65
- Max Collector Current
- 800mA
- Uzunluk
- 3.04mm
- Element Configuration
- Single
- Terminal Formu
- GULL WING
- Max Breakdown Voltage
- 32V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 40
- Pin Sayısı
- 3
- Akım Değeri
- 800mA
- Frekans
- 100MHz
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 100mA 1V
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Hfemin
- 80
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 32V
- Collector Base Voltage Vcbo
- 60V
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