Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- 40
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Dc Current Gain Hfe Min Ic Vce
- 215 @ 2mA 5V
- Akım Değeri
- -100mA
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Max Breakdown Voltage
- 32V
- Element Configuration
- Single
- Max Collector Current
- 100mA
- Transistor Type
- PNP
- Terminal Formu
- GULL WING
- Voltage Rated Dc
- -32V
- Montaj Tipi
- Surface Mount
- Number Of Elements
- 1
- Max Power Dissipation
- 225mW
- Terminal Pozisyonu
- DUAL
- Pin Sayısı
- 3
- Yayın Yılı
- 1999
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Yüzey Montaj
- YES
- Temel Parça No
- BCW30
- Polaritychannel Type
- PNP
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- -300mV
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Current Collector Cutoff Max
- 100nA ICBO
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 32V
- Kurşunsuz Kodu
- yes
- Hfemin
- 215
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Emitter Base Voltage Vebo
- 5V
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -65°C~150°C TJ
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