Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 300mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- 80V
- Collectoremitter Breakdown Voltage
- 65V
- Transistor Element Material
- SILICON
- Collectoremitter Saturation Voltage
- -650mV
- Radyasyon Dayanımı
- No
- Yükseklik
- 940μm
- Terminal Pozisyonu
- DUAL
- Current Collector Cutoff Max
- 15nA ICBO
- Gain Bandwidth Product
- 100MHz
- Uzunluk
- 2.9mm
- Voltage Rated Dc
- -65V
- Akım Değeri
- -100mA
- Frekans
- 100MHz
- Yüzey Montaj
- YES
- Max Breakdown Voltage
- 65V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Yayın Yılı
- 2005
- Transistor Type
- PNP
- Ambalaj
- Cut Tape (CT)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 1
- Parça Durumu
- Active
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 300mW
- Contact Plating
- Tin
- Emitter Base Voltage Vebo
- 5V
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Max Collector Current
- 100mA
- Reach Svhc
- No SVHC
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Fabrika Tedarik Süresi
- 4 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- PNP
- Transition Frequency
- 100MHz
- Element Configuration
- Single
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