Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 100mA 1V
- Terminal Formu
- GULL WING
- Current Collector Cutoff Max
- 100nA
- Emitter Base Voltage Vebo
- 5V
- Yükseklik
- 930μm
- Terminal Pozisyonu
- DUAL
- Frekans
- 100MHz
- Collector Base Voltage Vcbo
- 30V
- Uzunluk
- 2.9mm
- Yayın Yılı
- 2004
- Polaritychannel Type
- NPN
- Kurşunsuz
- Lead Free
- RoHS Durumu
- RoHS Compliant
- Gain Bandwidth Product
- 100MHz
- Power Dissipation
- 310mW
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Montaj
- Surface Mount
- Genişlik
- 1.3mm
- Fabrika Tedarik Süresi
- 6 Weeks
- Collector Emitter Voltage Vceo
- 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Contact Plating
- Tin
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation
- 310mW
- Kurşunsuz Kodu
- yes
- Hfemin
- 100
- Çalışma Sıcaklığı
- 150°C TJ
- Collectoremitter Breakdown Voltage
- 25V
- Transition Frequency
- 100MHz
- Max Collector Current
- 800mA
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Transistor Type
- NPN
- Temel Parça No
- BC818
- Collectoremitter Saturation Voltage
- 700mV
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
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