Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 100nA ICBO
- JESD-609 Kodu
- e3
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Weight
- 240.007063mg
- Collectoremitter Saturation Voltage
- -500mV
- Transistor Type
- PNP
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Yayın Yılı
- 2007
- Uzunluk
- 4.58mm
- Polaritychannel Type
- PNP
- Max Power Dissipation
- 1W
- Collectoremitter Breakdown Voltage
- 80V
- Max Breakdown Voltage
- 80V
- ECCN Kodu
- EAR99
- Transition Frequency
- 100MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Genişlik
- 3.86mm
- Gerilim
- 80V
- Parça Durumu
- Active
- Collector Base Voltage Vcbo
- -100V
- Element Configuration
- Single
- Temel Parça No
- BC640
- Akım Değeri
- -1A
- Montaj Tipi
- Through Hole
- Fabrika Tedarik Süresi
- 6 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 1A
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA 2V
- Contact Plating
- Tin
- Ambalaj
- Tape & Box (TB)
- Yükseklik
- 4.58mm
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Power Dissipation
- 1W
- Number Of Elements
- 1
- Akım
- 1A
- Hfemin
- 40
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