Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- Collector Base Voltage Vcbo
- -80V
- Frekans
- 150MHz
- Hfemin
- 25
- Kurşunsuz Kodu
- yes
- Emitter Base Voltage Vebo
- 5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 1
- Power Dissipation
- 625mW
- ECCN Kodu
- EAR99
- Transition Frequency
- 150MHz
- Collectoremitter Breakdown Voltage
- 80V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Akım Değeri
- -500mA
- Voltage Rated Dc
- -80V
- Montaj Tipi
- Through Hole
- Yüzey Montaj
- NO
- Temel Parça No
- BC640
- Gain Bandwidth Product
- 150MHz
- Terminal Pozisyonu
- BOTTOM
- Collector Emitter Voltage Vceo
- 500mV
- Element Configuration
- Single
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA 2V
- JESD-609 Kodu
- e1
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Pin Sayısı
- 3
- Max Collector Current
- 500mA
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Collector Cutoff Max
- 100nA ICBO
- Transistor Element Material
- SILICON
- Polaritychannel Type
- PNP
- Max Power Dissipation
- 625mW
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Yayın Yılı
- 2005
- Ambalaj
- Bulk
- Lifecycle Status
- OBSOLETE (Last Updated: 3 days ago)
- Collectoremitter Saturation Voltage
- -500mV
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