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BC639RL1G

ON Semiconductor

BC639RL1G

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Yayın Yılı
2005
Max Power Dissipation
625mW
Polaritychannel Type
NPN
Additional Feature
EUROPEAN PART NUMBER
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Collectoremitter Saturation Voltage
500mV
Transistor Type
NPN
Pin Sayısı
3
JESD-609 Kodu
e1
Terminal Sayısı
3
Transistor Element Material
SILICON
Current Collector Cutoff Max
100nA ICBO
Tepe Reflow Sıcaklığı (°C)
260
Montaj Tipi
Through Hole
Akım Değeri
1A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
3
Element Configuration
Single
Temel Parça No
BC639
Çalışma Sıcaklığı
-55°C~150°C TJ
Collector Base Voltage Vcbo
80V
Parça Durumu
Obsolete
Collectoremitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
ECCN Kodu
EAR99
Transition Frequency
200MHz
Ambalaj
Tape & Reel (TR)
Vce Saturation Max Ib Ic
500mV @ 50mA, 500mA
Tepe Reflow Süresi (maks. sn)
40
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Contact Plating
Copper, Silver, Tin
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Dc Current Gain Hfe Min Ic Vce
40 @ 150mA 2V
Max Collector Current
1A
Yüzey Montaj
NO
Voltage Rated Dc
80V
Radyasyon Dayanımı
No
Collector Emitter Voltage Vceo
80V

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