Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 2V
- HTS Kodu
- 8541.21.00.75
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Kodu
- e0
- Tepe Reflow Sıcaklığı (°C)
- 240
- Current Collector Cutoff Max
- 100nA ICBO
- Qualification Status
- Not Qualified
- Max Collector Current
- 1A
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Max Power Dissipation
- 625mW
- Polaritychannel Type
- NPN
- Additional Feature
- EUROPEAN PART NUMBER
- Continuous Collector Current
- 1A
- Yayın Yılı
- 2004
- Ambalaj
- Tape & Box (TB)
- Kurşunsuz
- Contains Lead
- RoHS Durumu
- Non-RoHS Compliant
- Tepe Reflow Süresi (maks. sn)
- 30
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Collectoremitter Saturation Voltage
- 500mV
- Transistor Type
- NPN
- Collector Base Voltage Vcbo
- 80V
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- 5V
- Hfemin
- 25
- ECCN Kodu
- EAR99
- Transition Frequency
- 200MHz
- Number Of Elements
- 1
- REACH Uyumluluk Kodu
- not_compliant
- Collectoremitter Breakdown Voltage
- 80V
- Jesd30 Code
- O-PBCY-T3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Rated Dc
- 80V
- Montaj Tipi
- Through Hole
- Akım Değeri
- 1A
- Montaj
- Through Hole
- Gain Bandwidth Product
- 200MHz
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