Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Collector Cutoff Max
- 100nA ICBO
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Collector Current
- 1A
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA 2V
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- JESD-609 Kodu
- e1
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Kurşunsuz
- Lead Free
- RoHS Durumu
- RoHS Compliant
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Type
- NPN
- Collectoremitter Saturation Voltage
- 500mV
- Contact Plating
- Copper, Silver, Tin
- Max Power Dissipation
- 625mW
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Polaritychannel Type
- NPN
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Ambalaj
- Bulk
- Yayın Yılı
- 2007
- ECCN Kodu
- EAR99
- Transition Frequency
- 200MHz
- Power Dissipation
- 625mW
- Number Of Elements
- 1
- Collectoremitter Breakdown Voltage
- 60V
- Collector Base Voltage Vcbo
- 60V
- Parça Durumu
- Obsolete
- Emitter Base Voltage Vebo
- 5V
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Frekans
- 200MHz
- Hfemin
- 25
- Temel Parça No
- BC637
- Terminal Pozisyonu
- BOTTOM
- Gain Bandwidth Product
- 200MHz
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
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