Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- 30
- Transistor Type
- PNP
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Parça Durumu
- Obsolete
- Terminal Sayısı
- 3
- RoHS Durumu
- Non-RoHS Compliant
- Power Max
- 625mW
- Akım Değeri
- -100mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- REACH Uyumluluk Kodu
- not_compliant
- Jesd30 Code
- O-PBCY-T3
- Yayın Yılı
- 2005
- Kurşunsuz
- Contains Lead
- Dc Current Gain Hfe Min Ic Vce
- 420 @ 2mA 5V
- ECCN Kodu
- EAR99
- HTS Kodu
- 8541.21.00.75
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- AMPLIFIER
- Montaj Tipi
- Through Hole
- Polaritychannel Type
- PNP
- Transition Frequency
- 360MHz
- Additional Feature
- EUROPEAN PART NUMBER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Frequency Transition
- 360MHz
- Number Of Elements
- 1
- Terminal Pozisyonu
- BOTTOM
- Qualification Status
- Not Qualified
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Current Collector Cutoff Max
- 100nA
- Pin Sayısı
- 3
- JESD-609 Kodu
- e0
- Collector Emitter Voltage Vceo
- 650mV
- Max Power Dissipation
- 625mW
- Tepe Reflow Sıcaklığı (°C)
- 240
- Max Collector Current
- 100mA
- Ambalaj
- Tape & Box (TB)
- Configuration
- SINGLE
- Voltage Rated Dc
- -30V
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