Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Akım Değeri
- -100mA
- Kurşunsuz
- Lead Free
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Yayın Yılı
- 2007
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Parça Durumu
- Obsolete
- Transistor Application
- SWITCHING
- Montaj Tipi
- Through Hole
- Contact Plating
- Tin
- Yükseklik
- 5.33mm
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 7 Weeks
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- Current Collector Cutoff Max
- 15nA ICBO
- Montaj
- Through Hole
- Genişlik
- 4.19mm
- Voltage Rated Dc
- -30V
- Collectoremitter Breakdown Voltage
- 30V
- Temel Parça No
- BC558
- JESD-609 Kodu
- e3
- Power Dissipation
- 500mW
- Max Collector Current
- 100mA
- Max Power Dissipation
- 500mW
- Uzunluk
- 5.2mm
- Weight
- 240mg
- Transistor Type
- PNP
- Hfemin
- 110
- Polaritychannel Type
- PNP
- Pin Sayısı
- 3
- Emitter Base Voltage Vebo
- -5V
- Gain Bandwidth Product
- 150MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Max Breakdown Voltage
- 30V
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