Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yükseklik
- 5.33mm
- Contact Plating
- Copper, Silver, Tin
- Montaj Tipi
- Through Hole
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- RoHS Compliant
- Terminal Sayısı
- 3
- Parça Durumu
- Obsolete
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2007
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 2mA 5V
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Akım Değeri
- -100mA
- Max Power Dissipation
- 625mW
- Max Collector Current
- 100mA
- Power Dissipation
- 625mW
- JESD-609 Kodu
- e1
- Temel Parça No
- BC557
- Collectoremitter Breakdown Voltage
- 45V
- Voltage Rated Dc
- -45V
- Genişlik
- 4.19mm
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Pin Sayısı
- 3
- Current Collector Cutoff Max
- 100nA
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gain Bandwidth Product
- 320MHz
- Emitter Base Voltage Vebo
- 5V
- Pin Sayısı
- 3
- Polaritychannel Type
- PNP
- Hfemin
- 180
- Transistor Type
- PNP
- Radyasyon Dayanımı
- No
- Yüzey Montaj
- NO
- Uzunluk
- 5.2mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Tape & Reel (TR)
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