Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Emitter Base Voltage Vebo
- 5V
- Gain Bandwidth Product
- 280MHz
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Hfemin
- 180
- Pin Sayısı
- 3
- Polaritychannel Type
- PNP
- Transistor Type
- PNP
- Radyasyon Dayanımı
- No
- Uzunluk
- 5.2mm
- Yüzey Montaj
- NO
- Collector Emitter Voltage Vceo
- 65V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Bulk
- Collectoremitter Saturation Voltage
- -300mV
- Element Configuration
- Single
- Transition Frequency
- 280MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frekans
- 280MHz
- Collector Base Voltage Vcbo
- 80V
- Number Of Elements
- 1
- Terminal Pozisyonu
- BOTTOM
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Transistor Application
- AMPLIFIER
- Montaj Tipi
- Through Hole
- Contact Plating
- Copper, Silver, Tin
- Yükseklik
- 5.33mm
- Tepe Reflow Süresi (maks. sn)
- 40
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Parça Durumu
- Obsolete
- Terminal Sayısı
- 3
- RoHS Durumu
- RoHS Compliant
- Akım Değeri
- -100mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Yayın Yılı
- 2007
- Kurşunsuz
- Lead Free
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 2mA 5V
- JESD-609 Kodu
- e1
- Max Power Dissipation
- 625mW
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